AO4409

AO4409 30V P-Channel MOSFET General Description Product Summary The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -15A RDS(ON) (at VGS=-10V) < 7.5mΩ RDS(ON) (at VGS =-4.5V) < 12mΩ * RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested VDS SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current Units V ±20 V -15 ID TA=70°C C Maximum -30 A -12.8 IDM -80 Avalanche Current C IAS, IAR 30 A Avalanche energy L=0.3mH C TA=25°C EAS, EAR 135 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.8.0: July 2013 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4409 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -5 TJ=55°C -25 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -80 VGS=-10V, ID=-15A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-10A gFS Forward Transconductance VDS=-5V, ID=-15A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Max 35 ±100 nA -2.7 V 6.2 7.5 8.2 11.5 9.5 12 A 50 -0.71 V -5 A 6400 945 pF Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 100 120 Qg(4.5V) Total Gate Charge 51.5 Qgd Gate Drain Charge VGS=-10V, VDS=-15V, ID=-15A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs VGS=-10V, VDS=-15V, RL=1Ω, RGEN=3Ω nC nC 14.5 nC 23 nC 14 ns 16.5 ns 76.5 ns 37.5 IF=-15A, dI/dt=100A/µs pF pF 3 Gate Source Charge mΩ S 2 Qgs mΩ -1 745 VGS=0V, VDS=0V, f=1MHz µA -1.9 5270 VGS=0V, VDS=-15V, f=1MHz Units V VDS=-30V, VGS=0V IGSS RDS(ON) Typ 36.7 ns 45 28 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using