AO4413L

AO4413 30V P-Channel MOSFET General Description Product Summary • The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-20V) VDS -30V -15A RDS(ON) (at VGS=-20V) < 7mΩ RDS(ON) (at VGS = -10V) < 8.5mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±25 V -15 ID TA=70°C Maximum -30 -12.8 IDM A -120 Avalanche Current C IAS, IAR 50 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 125 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 9: Jan 2010 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4413 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -120 TJ=55°C -5 VDS=0V, VGS= ±25V ±100 VGS=-20V, ID=-15A 9 VGS=-10V, ID=-15A 6.4 8.5 VDS=-5V, ID=-15A 35 Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=-10V, VDS=-15V, ID=-15A Units µA nA V A 7.5 gFS Reverse Transfer Capacitance -3.5 7 Static Drain-Source On-Resistance Output Capacitance -2.5 5.3 RDS(ON) Coss Max V VDS=-30V, VGS=0V IDSS Crss Typ -0.7 mΩ mΩ S -1 V -4 A 2310 2890 3500 pF 410 585 760 pF 280 470 660 pF 1.9 3.8 5.7 Ω 40 51 61 nC 10 12 14 nC 10 16 22 nC 16 VGS=-10V, VDS=-15V, RL=1.0Ω, RGEN=3Ω ns 12 ns 45 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-15A, dI/dt=100A/µs 14 18 22 22 ns Qrr Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs 9 11 13 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using