AO4420A
30V N-Channel MOSFET
General Description
Product Summary
The AO4420A uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is
suitable for use as a synchronous switch in PWM
applications.
VDS (V) = 30V
ID = 13.7A (VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 10V)
RDS(ON) < 12mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
AF
Current
VGS
TA=25°C
TA=70°C
Avalanche Current B
Power Dissipation
B
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
±12
V
ID
9.7
IDM
60
IAR
20
A
60
mJ
EAR
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
2
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
3.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
13.7
Pulsed Drain Current B
Repetitive avalanche energy L=0.3mH
TA=25°C
Maximum
30
RθJA
RθJL
Typ
28
54
21
°C
Max
40
75
30
Units
°C/W
°C/W
°C/W
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AO4420A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.6
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=13.7A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
Units
V
30
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=13.7A
100
nA
2
V
8.3
10.5
12.5
15
9.7
12
mΩ
1
V
5
A
A
mΩ
37
0.76
S
4050
pF
256
pF
168
pF
0.86
1.1
Ω
30.5
36
nC
4.6
Qgd
Gate Drain Charge
8.6
tD(on)
Turn-On DelayTime
5.5
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=15V, RL=1.1Ω,
RGEN=3Ω
µA
1.1
3656
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
1
5
VGS=4.5V, ID=12.7A
Output Capacitance
0.004
TJ=55°C
VGS=10V, ID=13.7A
Coss
Max
30
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
nC
nC
9
ns
ns
3.4
7
49.8
75
ns
5.9
11
ns
IF=13.7A, dI/dt=100A/µs
22.5
28
Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/µs
12.5
16
ns
nC
Body Diode Reverse Recovery Time
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using
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