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AO4420A

AO4420A

  • 厂商:

    AOSMD(美国万代)

  • 封装:

    SOT96-1

  • 描述:

    MOSFET N CH 30V 13.7A 8SOIC

  • 详情介绍
  • 数据手册
  • 价格&库存
AO4420A 数据手册
AO4420A 30V N-Channel MOSFET General Description Product Summary The AO4420A uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. VDS (V) = 30V ID = 13.7A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain AF Current VGS TA=25°C TA=70°C Avalanche Current B Power Dissipation B Junction and Storage Temperature Range Maximum Junction-to-Lead C ±12 V ID 9.7 IDM 60 IAR 20 A 60 mJ EAR -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 2 TJ, TSTG t ≤ 10s Steady-State Steady-State A 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 13.7 Pulsed Drain Current B Repetitive avalanche energy L=0.3mH TA=25°C Maximum 30 RθJA RθJL Typ 28 54 21 °C Max 40 75 30 Units °C/W °C/W °C/W www.aosmd.com AO4420A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=13.7A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Units V 30 VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=13.7A 100 nA 2 V 8.3 10.5 12.5 15 9.7 12 mΩ 1 V 5 A A mΩ 37 0.76 S 4050 pF 256 pF 168 pF 0.86 1.1 Ω 30.5 36 nC 4.6 Qgd Gate Drain Charge 8.6 tD(on) Turn-On DelayTime 5.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, RL=1.1Ω, RGEN=3Ω µA 1.1 3656 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs 1 5 VGS=4.5V, ID=12.7A Output Capacitance 0.004 TJ=55°C VGS=10V, ID=13.7A Coss Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ nC nC 9 ns ns 3.4 7 49.8 75 ns 5.9 11 ns IF=13.7A, dI/dt=100A/µs 22.5 28 Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/µs 12.5 16 ns nC Body Diode Reverse Recovery Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using
AO4420A
PDF文档中包含以下信息:

1. 物料型号:型号为EL817 2. 器件简介:EL817是一种光耦器件,用于隔离输入和输出电路,保护电路不受外部干扰。

3. 引脚分配:EL817共有6个引脚,分别为1脚阳极,2脚阴极,3脚输出,4脚集电极,5脚发射极,6脚地。

4. 参数特性:工作温度范围为-20℃至+85℃,隔离电压可达5000Vrms。

5. 功能详解:EL817通过光电效应实现信号传输,具有高速响应和低功耗特点。

6. 应用信息:广泛应用于工业控制、医疗设备、通信设备等领域。

7. 封装信息:采用DIP6封装方式。
AO4420A 价格&库存

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