AO4423_101

AO4423/AO4423L 30V P-Channel MOSFET General Description Product Summary The AO4423/AO4423L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -30V ID = -17A RDS(ON) < 6.2mΩ RDS(ON) < 7.2mΩ * RoHS and Halogen-Free Compliant ESD Protected 100% UIS tested 100% Rg tested (note *) (VGS = -20V) (VGS = -20V) (VGS = -10V) SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AF TA=70°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter AF Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Maximum Junction-to-Lead Rev.12.0 August 2017 Units V VGS ±25 V ID -14 IDM -182 TA=25°C Pulsed Drain Current B Power Dissipation A Maximum -30 C -17 3.1 PD W 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A RθJA RθJL Typ 26 50 14 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd,com Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -182 TJ=55°C -5 ±1 µA ±10 µA 9 VGS=-10V, ID=-15A 5.9 7.2 mΩ VGS=-6V, ID=-10A 7.5 9.5 mΩ -1 V -4.2 A 3033 pF 397 556 pF 4.3 6.4 Ω 47 57 nC Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current 48 -0.71 DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance V A 6.2 Forward Transconductance Output Capacitance -2.6 5.1 VSD Reverse Transfer Capacitance -2.1 7.4 TJ=125°C gFS Crss µA VDS=0V, VGS=±25V VDS=-5V, ID=-15A Coss Units VDS=0V, VGS=±20V VGS=-20V, ID=-15A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ 2527 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=-10V, VDS=-15V, ID=-15A S 583 2.1 mΩ pF 8 nC Gate Drain Charge 14 nC Turn-On DelayTime 12 ns 8 ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-15A, dI/dt=100A/µs 26.1 Qrr Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs 12.3 Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, RL=1.0Ω, RGEN=3Ω 54 ns 87 ns 32 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using