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AO4425

AO4425

  • 厂商:

    AOSMD(美国万代)

  • 封装:

    SOP8_150MIL

  • 描述:

    MOSFET P-CH 38V 14A 8SOIC

  • 数据手册
  • 价格&库存
AO4425 数据手册
AO4425 38V P-Channel MOSFET General Description Product Summary The AO4425 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. VDS (V) = -38V ID = -14A (VGS = -20V) RDS(ON) < 10mΩ (VGS = -20V) RDS(ON) < 11mΩ (VGS = -10V) ESD Rating: 4000V HBM 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current A TA=70°C TA=25°C Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Lead C ±25 V ID -11 IDM -50 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 2 TJ, TSTG t ≤ 10s Steady-State Steady-State A 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V -14 Pulsed Drain Current B A Maximum -38 RθJA RθJL Typ 26 50 14 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4425 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA, VGS=0V -38 -100 TJ=55°C -500 ±1 µA ±10 µA VDS=VGS ID=-250µA -2 On state drain current VGS=-10V, VDS=-5V -50 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current VGS=-20V, ID=-14A Reverse Transfer Capacitance Gate resistance Qgs Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr -3.5 10 13.5 VGS=-10V, ID=-14A 8.8 11 VDS=-5V, ID=-14A 43 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-20V, ID=-14A VGS=-10V, VDS=-20V, RL=1.35Ω, RGEN=3Ω IF=-14A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-14A, dI/dt=100A/µs V A 7.7 SWITCHING PARAMETERS Total Gate Charge Qg Qgd -2.5 11 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Rg nA VDS=0V, VGS=±25V Gate Threshold Voltage Crss Units VDS=0V, VGS=±20V VGS(th) Output Capacitance Max V VDS=-30V, VGS=0V ID(ON) Coss Typ 0.71 mΩ mΩ S 1 V 4.2 A 3800 pF 560 pF 350 pF 7.5 Ω 63 nC 14.1 nC 16.1 nC 12.4 ns 9.2 ns 97.5 ns 45.5 ns 35 ns nC 33 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. -15 B: Repetitive rating, pulse width limited by junction temperature. -12.8 C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using
AO4425 价格&库存

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AO4425
  •  国内价格 香港价格
  • 3000+4.014453000+0.47980
  • 6000+3.741166000+0.44714
  • 9000+3.699109000+0.44211

库存:19522

AO4425
  •  国内价格
  • 1+7.91746
  • 5+6.88975
  • 20+5.35417
  • 55+5.07867
  • 500+4.90858

库存:2514

AO4425
  •  国内价格 香港价格
  • 1+14.833621+1.77289
  • 10+9.4210210+1.12599
  • 100+6.31544100+0.75481
  • 500+4.98533500+0.59584
  • 1000+4.557621000+0.54472

库存:19522

AO4425
    •  国内价格
    • 1+5.87158
    • 10+5.41992
    • 30+5.32959
    • 100+5.05859

    库存:0