AO4425
38V P-Channel MOSFET
General Description
Product Summary
The AO4425 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. It is
ESD protected.
VDS (V) = -38V
ID = -14A (VGS = -20V)
RDS(ON) < 10mΩ (VGS = -20V)
RDS(ON) < 11mΩ (VGS = -10V)
ESD Rating: 4000V HBM
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
TA=70°C
TA=25°C
Power Dissipation
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
±25
V
ID
-11
IDM
-50
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
2
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
3.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
-14
Pulsed Drain Current B
A
Maximum
-38
RθJA
RθJL
Typ
26
50
14
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4425
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Conditions
Min
ID=-250µA, VGS=0V
-38
-100
TJ=55°C
-500
±1
µA
±10
µA
VDS=VGS ID=-250µA
-2
On state drain current
VGS=-10V, VDS=-5V
-50
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
VGS=-20V, ID=-14A
Reverse Transfer Capacitance
Gate resistance
Qgs
Gate Source Charge
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
-3.5
10
13.5
VGS=-10V, ID=-14A
8.8
11
VDS=-5V, ID=-14A
43
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-20V, ID=-14A
VGS=-10V, VDS=-20V, RL=1.35Ω,
RGEN=3Ω
IF=-14A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-14A, dI/dt=100A/µs
V
A
7.7
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgd
-2.5
11
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
nA
VDS=0V, VGS=±25V
Gate Threshold Voltage
Crss
Units
VDS=0V, VGS=±20V
VGS(th)
Output Capacitance
Max
V
VDS=-30V, VGS=0V
ID(ON)
Coss
Typ
0.71
mΩ
mΩ
S
1
V
4.2
A
3800
pF
560
pF
350
pF
7.5
Ω
63
nC
14.1
nC
16.1
nC
12.4
ns
9.2
ns
97.5
ns
45.5
ns
35
ns
nC
33
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
-15
B: Repetitive rating, pulse width limited by junction temperature.
-12.8
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using
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