AO4430

AO4430 30V N-Channel MOSFET General Description Product Summary The AO4430 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D D Bottom View D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current AF Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation TA=70°C Maximum 30 Units V ±20 V 18 ID 15 IDM 80 A 3 PD W 2.1 Avalanche Current B IAR 30 A Repetitive avalanche energy 0.3mH B EAR 135 mJ Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Rev.6.0: May 2015 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL www.aosmd.com Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=4.5V, VDS=5V 80 TJ=55°C 100 nA 1.8 2.5 V 4.7 5.5 6.5 8 7.5 A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=15A 6.2 gFS Forward Transconductance VDS=5V, ID=18A 82 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=10V, VDS=15V, ID=18A mΩ mΩ S 1 V 4.5 A 4660 6060 7270 pF 425 638 960 pF 240 355 530 pF 0.2 0.45 0.9 Ω 80 103 124 nC 37 48 58 nC Qgs Gate Source Charge Qgd Gate Drain Charge 15 tD(on) Turn-On DelayTime 12 18 nC nC 16 ns VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω 8 12 ns 51.5 70 ns 8.8 14 ns IF=18A, dI/dt=100A/µs 33.5 44 22 30 ns nC tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs Body Diode Reverse Recovery Time µA 5 VGS=10V, ID=18A Units V VDS=30V, VGS=0V Zero Gate Voltage Drain Current Crss Max 30 IDSS ID(ON) Typ A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using