AO4433

AO4433 30V P-Channel MOSFET General Description Product Summary The AO4433 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -30V ID = -11 A (VGS = -20V) RDS(ON) < 14mΩ (VGS = -20V) RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS= -5V) ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D D Bottom D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current AF B TA=25°C Power Dissipation Avalanche Current A B V ID -9.7 -50 Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A C Alpha & Omega Semiconductor, Ltd. W 2.1 EAR TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State A 3 IAR B Junction and Storage Temperature Range Maximum Junction-to-Lead ±25 IDM PD TA=70°C Repetitive avalanche energy 0.1mH Units V -11 TA=70°C Pulsed Drain Current Maximum -30 RθJA RθJL -36 A 65 mJ -55 to 150 °C Typ 28 54 21 Max 40 75 30 Units °C/W °C/W °C/W www.aosmd.com AO4433 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 On state drain current VGS=-10V, VDS=-5V -50 TJ=55°C -5 ±10 µA -3.5 V 11 14 15 19 VGS=-10V, ID=-10A 13.8 18 mΩ VGS=-5V, ID=-5A 25.8 36 mΩ TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-11A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 20 1760 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge A -0.72 DYNAMIC PARAMETERS Input Capacitance Ciss Coss µA -2.45 VGS=-20V, ID=-11A Static Drain-Source On-Resistance Units -1 Zero Gate Voltage Drain Current RDS(ON) Max V VDS=-30V, VGS=0V IDSS ID(ON) Typ VGS=-10V, VDS=-15V, ID=-11A S -1 V -4.2 A 2200 360 3.2 mΩ pF pF 255 357 pF 6.4 8 Ω 30 38 nC 7 nC Qgd Gate Drain Charge 8 nC tD(on) Turn-On DelayTime 11.5 ns tr Turn-On Rise Time 8 ns tD(off) Turn-Off DelayTime 35 ns tf trr Body Diode Reverse Recovery Time IF=-11A, dI/dt=100A/µs 24 Qrr Body Diode Reverse Recovery Charge IF=-11A, dI/dt=100A/µs 16 VGS=-10V, VDS=-15V, RL=1.5Ω, RGEN=3Ω Turn-Off Fall Time 18.5 ns 30 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using