AO4435
30V P-Channel MOSFET
General Description
Product Summary
The AO4435 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
VDS = -30V
ID = -10.5A
(VGS = -20V)
RDS(ON) < 14mΩ (VGS = -20V)
RDS(ON) < 18mΩ (VGS = -10V)
RDS(ON) < 36mΩ (VGS = -5V)
-RoHS Compliant
-AO4435 is Halogen Free
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
Power Dissipation A
-30
Units
V
±25
V
Maximum
-10.5
TA=70°C
B
TA=25°C
ID
-8
IDM
-80
3.1
PD
TA=70°C
A
W
2.0
Avalanche Current B
IAR
-20
A
Repetitive avalanche energy 0.3mH B
EAR
60
mJ
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
t ≤ 10s
Steady State
Steady State
Alpha & Omega Semiconductor, Ltd.
RθJA
RθJL
Typ
32
60
17
Max
40
75
24
Units
°C/W
°C/W
°C/W
www.aosmd.com
AO4435
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = -250µA, VGS = 0V
-30
Gate-Body leakage current
VDS = 0V, VGS = ±25V
VDS = VGS ID = -250µA
-1.7
ID(ON)
On state drain current
VGS = -10V, VDS = -5V
-80
VGS = -20V, ID = -11A
TJ=125°C
27
36
Maximum Body-Diode Continuous Current
mΩ
22
S
-0.74
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
A
VGS = -5V, ID = -5A
IS
Rg
14
18
IS = -1A,VGS = 0V
Output Capacitance
11
15
VDS = -5V, ID = -10A
Reverse Transfer Capacitance
V
19
Diode Forward Voltage
Crss
nA
-3
15
Forward Transconductance
Coss
±100
-2.3
VGS = -10V, ID = -10A
gFS
µA
-5
Gate Threshold Voltage
VSD
Units
-1
TJ = 55°C
VGS(th)
Static Drain-Source On-Resistance
Max
V
VDS = -30V, VGS = 0V
IGSS
RDS(ON)
Typ
1130
VGS=0V, VDS=-15V, f=1MHz
-1
V
-3.5
A
1400
pF
240
pF
155
pF
5.8
8
Ω
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
18
24
nC
Qg(4.5V)
Total Gate Charge
9.5
Qgs
Gate Source Charge
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-10A
1
5.5
nC
Qgd
Gate Drain Charge
3.3
nC
tD(on)
Turn-On DelayTime
8.7
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=-10A, dI/dt=100A/µs
25
Qrr
Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs
12
VGS=-10V, VDS=-15V, RL=1.5Ω,
RGEN=3Ω
8.5
ns
18
ns
7
ns
30
ns
nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using
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