AO4437L

AO4437 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4437 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4437 is Pb-free (meets ROHS & Sony 259 specifications). AO4437L is a Green Product ordering option. AO4437 and AO4437L are electrically identical. VDS (V) = -12V ID = -11 A (VGS = -4.5V) RDS(ON) < 16mΩ (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -2.5V) RDS(ON) < 25mΩ (VGS = -1.8V) ESD Rating: 4KV HBM SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±8 V -20 3 W 2.1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -9 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -11 TA=25°C Power Dissipation A Maximum -12 RθJA RθJL Typ 31 63 21 Max 40 75 30 Units °C/W °C/W °C/W AO4437 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage On state drain current ID(ON) Conditions Min ID=-250µA, VGS=0V VDS=-9.6V, VGS=0V -12 VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V -0.3 -20 gFS VSD IS Static Drain-Source On-Resistance TJ=125°C VGS=-2.5V, ID=-10A VGS=-1.8V, ID=-6A VDS=-5V, ID=-11A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.55 mΩ 25 20.4 38 -0.74 VGS=-4.5V, VDS=-6V, ID=-11A 37 4.5 IF=-11A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-11A, dI/dt=100A/µs -1 mΩ 757 6.9 VGS=-4.5V, VDS=-6V, RL=0.55Ω, RGEN=3Ω µA µA 20 VGS=0V, VDS=0V, f=1MHz Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time ±1 ±10 15.9 Rg Turn-On Delay Time µA 16 21 3960 910 tD(on) tr tD(off) tf trr Qrr -1 -5 12.4 17 VGS=0V, VDS=-6V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Units A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance Max V TJ=55°C VGS=-4.5V, ID=-11A RDS(ON) Typ mΩ S -1 V -4.5 A 4750 pF pF 8.5 47 11 15 43 158 95 64 50 pF Ω nC nC nC ns ns ns ns ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4437 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 VDS=-5V -8.0V 15 8 6 -1.5V 10 -ID(A) -ID (A) 10 -2.0V VGS=-1.0V 125°C 4 25°C 5 2 0 0 0.2 0.4 0.6 0.8 0 1 0.2 0.4 -VDS (Volts) Fig 1: On-Region Characteristics 1 1.2 1.4 Normalized On-Resistance 1.4 25 RDS(ON) (mΩ) 0.8 -VGS(Volts) Figure 2: Transfer Characteristics 30 VGS=-1.8V 20 VGS=-2.5V 15 VGS=-4.5V 10 ID=-6A, VGS=-1.8V ID=-10A, VGS=-2.5V 1.2 ID=-11A, VGS=-4.5V 1.0 0.8 0 2 4 6 8 10 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 40 35 125°C 1E+00 30 ID=-11A 1E-01 25 -IS (A) RDS(ON) (mΩ) 0.6 20 15 25°C 1E-02 1E-03 10 1E-04 125°C 25°C 5 1E-05 0 0 2 4 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4437 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6400 5.00E+00 Capacitance (pF) -VGS (Volts) 5600 VDS=-6V ID=-11A 4.00E+00 3.00E+00 2.00E+00 1.00E+00 Ciss 4800 4000 3200 2400 1600 Coss 800 0.00E+00 Crss 0 0 5 10 15 20 25 30 35 40 45 0 -Qg (nC) Figure 7: Gate-Charge Characteristics -ID (Amps) 40 TJ(Max)=150°C TA=25°C RDS(ON) limited 10 10µs 100µs 10.0 10ms 0.1s 1s 20 TJ(Max)=150°C TA=25°C 30 1ms 1.0 15 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) 100.0 5 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000