AO4441

AO4441 60V P-Channel MOSFET General Description Product Summary The AO4441 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) -60V -4A RDS(ON) (at VGS=-10V) < 100mW RDS(ON) (at VGS = -4.5V) < 130mW SOIC-8 Top View D Bottom View D D D D G G S S S S PIN 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain A Current Pulsed Drain Current B Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Lead C Rev.3.0: August 2019 Steady-State Steady-State A 3.1 W 2 TJ, TSTG Symbol t ≤ 10s V -20 PD TA=70°C ±20 -3.1 IDM TA=25°C A Units V -4 ID TA=70°C Maximum -60 RqJA RqJL www.aosmd.com -55 to 150 Typ 24 54 21 °C Max 40 75 30 Units °C/W °C/W °C/W Page 1 of 5 AO4441 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250mA, VGS=0V -60 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -1 TJ=55°C TJ=125°C VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance nA -3 V 80 100 130 10 VDS=-5V, ID=-4A VGS=0V, VDS=-30V, f=1MHz mA ±100 102 Forward Transconductance Units -2.1 VGS=-4.5V, ID=-3A gFS Coss -5 -1 VGS=-10V, ID=-4A Static Drain-Source On-Resistance Max V VDS=-48V, VGS=0V IDSS RDS(ON) Typ -0.77 130 mW mW S -1 V -4 A 930 pF 85 pF 35 pF 9.5 15 W SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16 22 nC Qg(4.5V) Total Gate Charge 8 12 nC Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/ms Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/ms 32 f=1MHz VGS=-10V, VDS=-30V, ID=-4A 2.5 nC Gate Drain Charge 3.2 nC Turn-On DelayTime 8 ns 3.8 ns 31.5 ns 7.5 ns 27 ns nC VGS=-10V, VDS=-30V, RL=7.5W, RGEN=3W A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R qJA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 ms pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: August 2019 www.aosmd.com Page 2 of 5 AO4441 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 -6V 15 -4.5V -4V -5V -10V VDS=-5V 8 -ID(A) -ID (A) 6 10 -3.5V 125°C 4 25°C 5 2 VGS=-3V 0 0 0 1 2 3 4 0 5 2 3 4 5 6 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 110 Normalized On-Resistance 2.00 100 RDS(ON) (mW) 1 VGS=-4.5V 90 VGS=-10V 80 1.80 VGS=-10V ID=-4A 1.60 1.40 1.20 VGS=-4.5V ID=-3A 1.00 0.80 70 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=-4A 180 1.0E+00 1.0E-01 140 -IS (A) RDS(ON) (mW) 160 125°C 120 125°C 1.0E-02 25°C 1.0E-03 100 1.0E-04 25°C 80 1.0E-05 60 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.3.0: August 2019 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 5 AO4441 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=-30V ID=-4A 8 1200 Capacitance (pF) -VGS (Volts) Ciss 6 4 2 900 600 Coss Crss 300 0 0 0 5 10 15 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 TJ(Max)=150°C TA=25°C 10ms 100ms Power (W) -ID (Amps) 30 RDS(ON) limited 10.0 1ms 1.0 20 1s TJ(Max)=150°C TA=25°C 10 10ms 10s 0.1s DC 0 0.001 0.1 0.1 1 10 100 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) -VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Z qJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=75°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev.3.0: August 2019 www.aosmd.com Page 4 of 5 AO4441 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.3.0: August 2019 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5