AO4443

AO4443 40V P-Channel MOSFET General Description Product Summary The AO4443 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-10V) VDS -40V -6A RDS(ON) (at VGS=-10V) < 42mΩ RDS(ON) (at VGS =-4.5V) < 63mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±20 V -6 ID TA=70°C Maximum -40 -5 A IDM -40 Avalanche Current C IAS, IAR 20 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 20 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 5: June 2015 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4443 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -40 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V 40 VGS=-10V, ID=-6A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-5A gFS Forward Transconductance VDS=-5V, ID=-6A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Max ±100 nA -2.6 V 35 42 53 65 46.5 63 mΩ -1 V -3.5 A A -0.76 750 940 1175 97 7 14 pF 21 Ω nC 17.3 22 Qg(4.5V) 8.4 11 VGS=-10V, VDS=-20V, ID=-6A Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs VGS=-10V, VDS=-20V, RL=3.35Ω, RGEN=3Ω 3.2 nC 4.3 nC 10.3 ns 4.3 ns 39 ns 46.5 IF=-6A, dI/dt=100A/µs pF pF SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs mΩ S 72 VGS=0V, VDS=0V, f=1MHz µA -2 17 VGS=0V, VDS=-20V, f=1MHz Units V VDS=-40V, VGS=0V IGSS RDS(ON) Typ 17 ns 24 11.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using