AO4447

AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4447 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4447 is Pb-free (meets ROHS & Sony 259 specifications). AO4447L is a Green Product ordering option. AO4447 and AO4447L are electrically identical. Features VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4V) ESD Rating: 4KV HBM SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -15 -13.6 -60 3.1 2 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 26 50 14 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4447 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250 μA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250 μA VGS=-10V, VDS=-5V VGS=-10V, I D=-15A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4V, ID=-13A Forward Transconductance VDS=-5V, ID=-15A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C -1 -60 6.7 9.4 9.2 60 -0.69 -1 5.5 5500 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 745 473 3.1 88.8 VGS=-10V, VDS=-15V, 15A I D=45.2 10.1 19.4 12 VGS=-10V, VDS=-15V, RL=1.7Ω, RGEN=3Ω IF=-15A, dI/dt=100A/ μs IF=-15A, dI/dt=100A/ μs 11.5 100 40 46.6 67.7 60 4 120 60 6600 8 12 12 -1.3 Min -30 -1 -10 ±10 -1.6 Typ Max Units V μA μA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qg(4.5V) Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 1. June 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4447 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 40 -ID (A) 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 12 Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature VGS=-4V ID=-13A VGS=-2.5V 5 0 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics -3.5V -10V -3V -4V 15 -ID(A) 10 25°C 25 VDS=-5V 20 125°C RDS(ON) (mΩ ) 10 VGS=-4V VGS=-10V ID=-15A 8 VGS=-10V 6 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 25 RDS(ON) (mΩ ) 20 -IS (A) 15 125°C 10 5 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C ID=-15A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 125°C 25°C Alpha & Omega Semiconductor, Ltd. AO4447 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-15V ID=-15A Capacitance (pF) 8000 7000 6000 5000 4000 3000 2000 1000 0 0 20 40 60 80 100 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 RDS(ON) limited 10.0 -ID (Amps) 100μs 1ms Power (W) 10ms 0.1s 1s TJ(Max)=150°C TA=25°C 0.1 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 10s DC 10μs 0 0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Ciss 8 -VGS (Volts) 6 4 Coss 2 100 80 60 40 20 0 0.001 TJ(Max)=150°C TA=25°C 1.0 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.01 0.1 0.1 PD Ton Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000 T 0.01 0.00001 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. ALPHA & OMEGA SEMICONDUCTOR, LTD. 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