AO4448

AO4448 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AO4448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 80V 10A RDS(ON) (at VGS=10V) < 16mΩ RDS(ON) (at VGS = 7V) < 20mΩ 100% UIS Tested 100% Rg Tested SOIC-8 D Top View D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±25 V 10 ID TA=70°C Maximum 80 8 A Pulsed Drain Current C IDM Avalanche Current C IAS, IAR 45 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 101 mJ Power Dissipation B Junction and Storage Temperature Range Rev 1: Nov 2010 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 70 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4448 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ 80 10 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.8 ID(ON) On state drain current VGS=10V, VDS=5V 70 TJ=55°C 50 VDS=0V, VGS= ±25V 100 VGS=10V, ID=10A 3.3 13 16 23.5 28.5 VGS=7V, ID=8A 15.4 20 VDS=5V, ID=10A 23 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime nA V mΩ mΩ S 1 V 4 A 2005 pF 1335 1670 150 215 280 pF 40 72 100 pF VGS=0V, VDS=0V, f=1MHz 0.35 0.75 1.2 Ω 22 28 34 nC VGS=10V, VDS=40V, ID=10A 8.8 11 13 nC 5 8 11 nC VGS=0V, VDS=40V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs 4.2 µA A RDS(ON) TJ=125°C Units V VDS=80V, VGS=0V IDSS Crss Max VGS=10V, VDS=40V, RL=4Ω, RGEN=3Ω 12 ns 9 ns 20 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 14.5 21 27.5 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 45.5 65 85 8 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using