AO4448L

AO4448L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AO4448L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 80V 10A RDS(ON) (at VGS=10V) < 16mΩ RDS(ON) (at VGS = 7V) < 20mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current Maximum 80 ±25 C V 10 ID TA=70°C Units V 8 IDM A 70 Avalanche Current C IAS, IAR 45 A Avalanche energy L=0.1mH C EAS, EAR 101 mJ TA=25°C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: December 2009 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4448L Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=80V, VGS=0V 50 Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 2.8 VGS=10V, VDS=5V 70 VGS=10V, ID=10A TJ=125°C VGS=7V, ID=8A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS VDS=5V, ID=10A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=40V, ID=10A Units V 10 TJ=55°C Static Drain-Source On-Resistance Max 80 IGSS RDS(ON) Typ µA 100 nA 3.3 4.2 V 13 16 23.5 28.5 15.4 20 mΩ 1 V 4 A A 23 0.7 mΩ S 1335 1670 2005 pF 150 215 280 pF 40 72 100 pF 0.35 0.75 1.2 Ω 22 28 34 nC 8.8 11 13 nC 5 8 11 nC 12 VGS=10V, VDS=40V, RL=4Ω, RGEN=3Ω ns 9 ns 20 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 14.5 21 27.5 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 45.5 65 85 8 ns ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using