AO4450_101

AO4450 40V N-Channel MOSFET General Description Product Summary The AO4450 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 40V 7A RDS(ON) (at VGS=10V) < 30mΩ RDS(ON) (at VGS=4.5V) < 38mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C C Avalanche energy L=0.1mH TA=25°C Power Dissipation B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 3: Dec. 2011 Steady-State Steady-State A 45 IAS 14 A 10 mJ 3.1 W 2 TJ, TSTG Symbol t ≤ 10s V 5.5 PD Junction and Storage Temperature Range ±20 IDM EAS TA=70°C Units V 7 ID TA=70°C C Maximum 40 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4450 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 45 ±100 nA 2.5 3 V 24 30 36 45 VGS=4.5V, ID=5A 30 38 mΩ 1 V 3.5 A VGS=10V, ID=7A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=7A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 40 VDS=40V, VGS=0V IGSS RDS(ON) Typ mΩ S 516 pF VGS=0V, VDS=20V, f=1MHz 82 pF 43 pF VGS=0V, VDS=0V, f=1MHz 4.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8.9 13 nC Qg(4.5V) Total Gate Charge 4.3 7 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=20V, ID=7A VGS=10V, VDS=20V, RL=2.8Ω, RGEN=3Ω 2.4 nC 1.4 nC 6.4 ns 3.6 ns 16.2 ns tf Turn-Off Fall Time 6.6 ns trr Body Diode Reverse Recovery Time IF=7A, dI/dt=100A/µs 18 Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs 10 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using