AO4452

AO4452 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AO4452 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 100V 8A RDS(ON) (at VGS=10V) < 25mΩ RDS(ON) (at VGS = 7V) < 31mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C Units V ±25 V 8 ID TA=70°C Maximum 100 6.5 A IDM 57 Avalanche Current C IAR 28 A Repetitive avalanche energy L=0.1mH C TA=25°C EAR 39 mJ Pulsed Drain Current Power Dissipation B TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 3: May 2012 3.1 PD TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4452 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 10 TJ=55°C 50 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage VDS=VGS ID=250µA 2 ID(ON) On state drain current VGS=10V, VDS=5V 60 nA 4 V 20.5 25 36 43 VGS=7V, ID=6.5A 25 31 mΩ 1 V 5 A TJ=125°C A gFS Forward Transconductance VDS=5V, ID=8A 23 VSD Diode Forward Voltage IS=1A,VGS=0V 0.66 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge S 1400 1770 2200 pF 115 165 215 pF 33 55 80 pF VGS=0V, VDS=0V, f=1MHz 0.3 0.65 1.0 Ω 14 28 42 nC 4 9 14 nC 10 14 nC VGS=10V, VDS=50V, ID=8A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr 11 16 21 42 60 78 trr IF=8A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs IF=8A, dI/dt=100A/µs Body Diode Reverse Recovery Time 21 27 33 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 20 28 36 Qrr mΩ VGS=0V, VDS=50V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs µA 100 Static Drain-Source On-Resistance Output Capacitance Units 3.2 VGS=10V, ID=8A Coss Max V VDS=100V, VGS=0V VGS(th) RDS(ON) Typ 6 VGS=10V, VDS=50V, RL=6Ω, RGEN=3Ω 12 ns 4 ns 17 ns 5 ns ns nC ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using