AO4454

AO4454 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AO4454 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behaviar. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 100V 6.5A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 36mΩ RDS(ON) (at VGS = 7V) < 43mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±25 V 6.5 ID TA=70°C Maximum 100 5.3 A IDM 46 Avalanche Current C IAS, IAR 28 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 39 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev1: November 2010 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4454 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 10 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.8 ID(ON) On state drain current VGS=10V, VDS=5V 46 TJ=55°C 50 VDS=0V, VGS= ±25V 100 VGS=10V, ID=6.5A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=6.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C VGS=7V, ID=6A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance Max Units V VDS=100V, VGS=0V IDSS Crss Typ 3.4 4 µA nA V A 30 36 56 67 35.5 43 mΩ 1 V 4 A pF 20 0.68 mΩ S 950 1180 1450 77 110 145 pF 21 36 50 pF VGS=0V, VDS=0V, f=1MHz 0.35 0.7 1.05 Ω 15 19 23 nC VGS=10V, VDS=50V, ID=6.5A 5.5 7 8.5 nC 3.5 6.3 9 nC VGS=0V, VDS=50V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=6.5A, dI/dt=500A/µs 11 16 21 Qrr Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=500A/µs 35 50 65 10 VGS=10V, VDS=50V, RL=6.7Ω, RGEN=3Ω ns 7.2 ns 15 ns 7 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using