AO4455

AO4455 30V P-Channel MOSFET General Description Product Summary The AO4455 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -30V ID = -17A RDS(ON) < 6.2mΩ RDS(ON) < 7.2mΩ * RoHS and Halogen-Free Complaint ESD Protected 100% UIS tested 100% Rg tested (VGS = -20V) (VGS = -20V) (VGS = -10V) SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AF Units V VGS ±25 V ID -14 IDM -182 TA=25°C TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A Maximum -30 TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Rev.1.0: July 2013 -17 3.1 PD W 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A RθJA RθJL www.aosmd.com Typ 26 50 14 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4455 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage Conditions Min ID=-250µA, VGS=0V -30 Static Drain-Source On-Resistance -1 TJ=55°C -5 ±1 µA ±10 µA -2.1 -2.6 V 5 6.2 7.2 9 VGS=-10V, ID=-15A 5.7 7.2 mΩ VGS=-6V, ID=-10A 7.4 9.5 mΩ 48 VDS=VGS ID=-250µA -1.5 TJ=125°C VDS=-5V, ID=-15A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current -0.7 DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance 2823 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge µA VDS=0V, VGS=±25V Forward Transconductance Output Capacitance Units VDS=0V, VGS=±20V gFS Coss Max V VDS=-30V, VGS=0V VGS=-20V, ID=-15A RDS(ON) Typ VGS=-10V, VDS=-15V, ID=-15A S -1 V -4.2 A 3400 574 2.1 mΩ pF pF 424 600 pF 4.0 6.4 Ω 54 76 nC 9 nC Qgd Gate Drain Charge 16 nC tD(on) Turn-On DelayTime 12.5 ns tr Turn-On Rise Time ns Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=1.0Ω, RGEN=3Ω 12.5 tD(off) 49 ns tf trr Turn-Off Fall Time IF=-15A, dI/dt=100A/µs 22.3 Qrr 109 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs ns 32 8.8 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using