AO4456

AO4456 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS 30V 20A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 4.6mΩ RDS(ON) (at VGS = 4.5V) < 5.6mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Units V ±12 V 20 ID TC=70°C Maximum 30 16 A Pulsed Drain Current C IDM Avalanche Current C IAS, IAR 47 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 110 mJ Power Dissipation B Junction and Storage Temperature Range Rev9: March 2011 3.1 PD TC=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 120 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2.0 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 7 AO4456 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ 30 0.1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 120 TJ=125°C 20 100 VGS=10V, ID=20A 1.8 5.9 7.4 VGS=4.5V, ID=18A 4.5 5.6 mΩ VDS=5V, ID=20A 112 0.7 V 5 A 5185 pF Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.5 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance V 4.6 gFS Output Capacitance nA 3.8 Static Drain-Source On-Resistance Reverse Transfer Capacitance 2.4 mA A RDS(ON) Crss Units V VDS=30V, VGS=0V IDSS Coss Max 4320 VGS=0V, VDS=15V, f=1MHz mΩ S 570 pF 310 493 pF 0.2 0.5 0.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 60 77 95 nC Qg(4.5V) Total Gate Charge 30 44 42 Qgs Gate Source Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A nC 9.8 nC Qgd Gate Drain Charge 16 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time 10 ns tD(off) Turn-Off DelayTime 46 ns tf Turn-Off Fall Time 9.5 ns trr Qrr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 12 15 20 ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedence from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using