AO4459

AO4459 30V P-Channel MOSFET General Description Product Summary The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-10V) -30V -6.5A RDS(ON) (at VGS=-10V) < 46mΩ RDS(ON) (at VGS = -4.5V) < 72mΩ VDS 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C Units V ±20 V -6.5 ID TA=70°C Maximum -30 -5.3 A IDM -30 Avalanche Current C IAS, IAR 17 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 14 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 2: Nov 2011 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4459 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 nA -2.4 V 33 46 50 68 VGS=-4.5V, ID=-5A 53 72 14 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-6.5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Gate resistance A -0.8 DYNAMIC PARAMETERS Input Capacitance Ciss Rg µA ±100 Static Drain-Source On-Resistance Output Capacitance Units -1.9 VGS=-10V, ID=-6.5A Coss Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz S V -3.5 A 520 pF 100 pF pF Ω 7.5 11.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9.2 11 nC Qg(4.5V) Total Gate Charge 4.6 6 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-15V, ID=-6.5A 3.5 mΩ -1 65 VGS=0V, VDS=0V, f=1MHz mΩ 1.6 nC 2.2 nC 7.5 ns VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=3Ω 5.5 ns 19 ns 7 ns IF=-6.5A, dI/dt=100A/µs 11 Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/µs 5.3 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using