AO4466_102

AO4466 30V N-Channel MOSFET General Description Product Summary The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. VDS (V) = 30V ID = 10A RDS(ON) < 23mΩ RDS(ON) < 35mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested * RoHS and Halogen-Free Compliant SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current AF Pulsed Drain Current Units V ±20 V 10 TA=70°C ID B 64 3.1 PD TA=70°C A 7 IDM TA=25°C Power Dissipation Maximum 30 W 2 Avalanche Current B, G IAR 12 A Repetitive avalanche energy 0.1mH B, G EAR 7 mJ Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Rev.10.0: July 2013 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL www.aosmd.com Typ 36 62 18 Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4466 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V VDS=VGS ID=250µA 1.5 On state drain current VGS=4.5V, VDS=5V 64 VGS=10V, ID=10A 100 nA 2.1 2.6 V 16.7 23 24.3 30 35 A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=5A 23.7 gFS Forward Transconductance VDS=5V, ID=10A 17 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 0.75 VGS=10V, VDS=15V, ID=10A mΩ mΩ S 1 V 2.4 A 373 448 pF 46 67 88 pF 24 41 58 pF 0.6 1.8 2.8 Ω 5.7 7.1 8.6 nC 2.7 3.5 4.2 nC 298 VGS=0V, VDS=15V, f=1MHz µA 5 Gate Threshold Voltage Units V VDS=30 VGS=0V VGS(th) Crss Max 30 IGSS ID(ON) Typ 1.2 nC Qgd Gate Drain Charge 1.6 nC tD(on) Turn-On DelayTime 4.3 ns 2.8 ns 15.8 ns VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=10A, dI/dt=100A/µs 8.4 10.5 12.6 Qrr 3.6 4.5 5.4 trr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs IF=10A, dI/dt=500A/µs Body Diode Reverse Recovery Time 4.7 6.0 7.2 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 5.3 6.6 8 Body Diode Reverse Recovery Time 3 ns ns nC ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using