AO4474

AO4474 30V N-Channel MOSFET General Description Product Summary The AO4474 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS (V) = 30V (VGS = 10V) ID = 13.4A RDS(ON) < 11.5mΩ (VGS = 10V) RDS(ON) < 13.5mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A, F VGS TA=25°C TA=70°C TA=25°C Avalanche Current B, G B, G Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C ±12 V IDSM 10.7 IDM 60 W 2.4 IAR 42 A EAR 88 mJ -55 to 150 °C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 3.7 PD TA=70°C Repetitive avalanche energy 0.1mH Units V 13.4 Pulsed Drain Current B Power Dissipation Maximum 30 RθJA RθJL Typ 28 57 16 Max 34 71 23 Units °C/W °C/W °C/W www.aosmd.com AO4474 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 60 TJ=55°C 5 VGS=10V, ID=13.4A TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V, ID=13.4A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current µA 0.1 µA 1.55 2.5 V 9.5 11.5 16.2 18 11 13.5 mΩ 1.0 V 5 A A 40 0.74 DYNAMIC PARAMETERS Input Capacitance Ciss Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ mΩ S 1210 1452 pF 330 396 pF 85 119 pF 1.2 1.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 22 28 nC Qg(4.5V) Total Gate Charge 10 13 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=13.4A VGS=10V, VDS=15V, RL=1.1Ω, RGEN=3Ω 0.8 3.7 nC 2.7 nC 10 ns 6.3 ns 21 ns 2.8 ns IF=13.4A, dI/dt=100A/µs 36 Body Diode Reverse Recovery Charge IF=13.4A, dI/dt=100A/µs IF=13.4A, dI/dt=500A/µs Body Diode Reverse Recovery Time 47 trr Qrr Body Diode Reverse Recovery Charge IF=13.4A, dI/dt=500A/µs 55 Qrr Body Diode Reverse Recovery Time 20 45 ns nC 27 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using