AO4476G

AO4476 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4476/L uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. AO4476 and AO4476L are electrically identical. -RoHS Compliant -AO4476L is Halogen Free VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested D S S S G D D D D G SOIC-8 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF TA=25°C TA=70°C IDSM IDM TA=25°C B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Lead C ±20 V 60 3.7 W 2.4 IAR 30 A EAR 135 mJ -55 to 150 °C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 12 PD TA=70°C Repetitive avalanche energy 0.3mH Units V 15 Pulsed Drain Current B Power Dissipation B Avalanche Current Maximum 30 RθJA RθJL Typ 28 57 16 Max 34 71 23 Units °C/W °C/W °C/W www.aosmd.com AO4476 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 60 RDS(ON) Static Drain-Source On-Resistance TJ=55°C Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 14 VDS=5V, ID=15A 33 0.73 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=15A µA 2.5 V 10.5 11 DYNAMIC PARAMETERS Ciss Input Capacitance Crss 0.1 A VGS=4.5V, ID=12A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Coss 2.1 8.5 TJ=125°C Forward Transconductance uA 5 VGS=10V, ID=15A VSD Units V 1 Zero Gate Voltage Drain Current gFS Max 30 VDS=30V, VGS=0V IDSS IS Typ 0.6 mΩ mΩ 17 S 1.0 V 5 A 1000 1200 pF 340 408 pF 100 140 pF 1.3 2.0 Ω 18 23 nC 8.5 11 nC 3.1 nC Gate Drain Charge 4.8 nC Turn-On DelayTime 6 ns VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω 3.8 ns 20 ns 3.8 ns trr Body Diode Reverse Recovery Time IF=15A, dI/dt=100A/µs 28 Qrr Body Diode Reverse Recovery Charge IF=15A, dI/dt=100A/µs 21 34 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using