AO4480

AO4480 40V N-Channel MOSFET General Description Product Summary The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. VDS (V) = 40V ID = 14A (VGS = 10V) RDS(ON) < 11.5mΩ (VGS = 10V) RDS(ON) < 15.5mΩ (VGS = 4.5V) ESD Rating: 4KV HBM 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D Bottom View D D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current AF VGS TA=25°C Units V ±20 V 14 TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation Maximum 40 IDSM 11 IDM 70 3.1 PD TA=70°C A W 2.0 Avalanche Current B IAR 30 A Repetitive avalanche energy 0.3mH B EAR 135 mJ Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 30 59 16 Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4480 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250uA, VGS=0V 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 70 VGS=10V, ID=14A TJ=125°C VGS=4.5V, ID=5A ±100 µA 3 V 9 11.5 A 13 12 Forward Transconductance VDS=5V, ID=14A 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1600 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz uA 2 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 40 VDS=32V, VGS=0V IGSS RDS(ON) Typ mΩ 15.5 mΩ 1 V 4 A S 1920 pF 320 pF 100 pF 3.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 22 nC Qg(4.5V) Total Gate Charge 10.5 nC 4.2 nC 4.8 nC 3.5 ns VGS=10V, VDS=20V, ID=14A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=14A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=14A, dI/dt=100A/µs 33 VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω 6 ns 13.2 ns 3.5 ns 31 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using