AO4486

AO4486 100V N-Channel MOSFET General Description Product Summary The AO4486 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 4.2A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 79mΩ RDS(ON) (at VGS = 4.5V) < 90mΩ 100% UIS Tested 100% Rg Tested SOIC-8 D Top View D Bottom View D D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C Units V ±20 V 4.2 ID TA=70°C Maximum 100 3.4 A IDM 31 Avalanche Current C IAS, IAR 14 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 10 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: Sep 2010 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4486 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 1 TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 31 VGS=10V, ID=3A TJ=125°C VGS=4.5V, ID=3A ±100 nA 2.2 2.7 V 62.5 79 121 151 68.5 90 mΩ 1 V 3.5 A A gFS Forward Transconductance VDS=5V, ID=3A 20 VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Units µA 5 VGS(th) Static Drain-Source On-Resistance Max V VDS=100V, VGS=0V IGSS RDS(ON) Typ mΩ S 620 778 942 pF VGS=0V, VDS=50V, f=1MHz 38 55 81 pF 13 24 35 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.45 2.2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13 16.3 20 nC Qg(4.5V) Total Gate Charge 6.4 8.1 10 nC 2.2 2.8 3.4 nC 2.4 4.1 5.8 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=50V, ID=3.0A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=3A, dI/dt=500A/µs 14 21 28 Qrr Body Diode Reverse Recovery Charge IF=3A, dI/dt=500A/µs 65 94 123 VGS=10V, VDS=50V, RL=16.7Ω, RGEN=3Ω 6 ns 2.5 ns 21 ns 2.4 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using