AO4490

AO4490 30V N-Channel MOSFET General Description Product Summary The AO4490 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a load switch and general purpose applications. VDS (V) = 30V (VGS = 10V) ID = 16A RDS(ON) < 7.2mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 4.5V) ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain AF Current VGS TA=25°C TA=70°C Avalanche Current G Power Dissipation G Junction and Storage Temperature Range Maximum Junction-to-Lead C ±20 V ID 13 IDM 120 IAR 30 A EAR 135 mJ -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 1.8 TJ, TSTG t ≤ 10s Steady-State Steady-State A 2.8 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 16 Pulsed Drain Current B Repetitive avalanche energy L=0.3mH TA=25°C Maximum 30 RθJA RθJL Typ 32 62 18 °C Max 45 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4490 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ 30 37 VDS=30V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±16V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 120 TJ=55°C VGS=10V, ID=16A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=12A gFS Forward Transconductance VDS=5V, ID=16A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 5 VGS=0V, VDS=0V, f=1MHz µA 10 µA 1.8 2.5 V 6 7.2 8.5 10 8 10 mΩ 1.0 V 4 A A 55 0.70 1803 VGS=0V, VDS=15V, f=1MHz Units V 1 IDSS RDS(ON) Max mΩ S 2170 pF 387 pF 238 pF Ω 1.3 2 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 36 48 Qg(4.5V) Total Gate Charge 19 nC 3.9 nC 8.7 nC 7.6 ns 6.4 ns 27 ns 8.5 ns VGS=10V, VDS=15V, ID=16A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=16A, dI/dt=100A/µs 27 Qrr Body Diode Reverse Recovery Charge IF=16A, dI/dt=100A/µs 17 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω 33 nC ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using