AO4490L

AO4490 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4490/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a load switch and general purpose applications. AO4490 and AO4490L are electrically identical. -RoHS Compliant -AO4490L is Halogen Free VDS (V) = 30V (VGS = 10V) ID = 16A RDS(ON) < 7.2mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 4.5V) ESD protected UIS Tested! Rg, Ciss,Coss,Crss Tested S S S G D D D D D G SOIC-8 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current AF Pulsed Drain Current Maximum 30 Units V ±20 V 16 TA=70°C B A 13 ID IDM 120 Avalanche Current G IAR 30 A Repetitive avalanche energy L=0.3mH G EAR 135 mJ TA=25°C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. 2.8 PD TA=70°C TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 1.8 RθJA RθJL Typ 32 62 18 °C Max 45 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4490 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±16V 1 5 10 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 120 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=16A TJ=125°C VGS=4.5V, ID=12A Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=16A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Units V TJ=55°C gFS Max 30 VDS=30V, VGS=0V IDSS IS Typ 1.8 VGS=0V, VDS=0V, f=1MHz µA 2.5 V A 6 7.2 8.5 10 8 10 mΩ 1.0 V 4 A 2170 pF mΩ 55 0.70 1803 VGS=0V, VDS=15V, f=1MHz µA S 387 pF 238 pF 1.3 2 Ω 36 48 nC 19 nC 3.9 nC Gate Drain Charge 8.7 nC Turn-On DelayTime 7.6 ns 6.4 ns 27 ns 8.5 ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, ID=16A VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=16A, dI/dt=100A/µs 27 Qrr Body Diode Reverse Recovery Charge IF=16A, dI/dt=100A/µs 17 33 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using