AO4492

AO4492 30V N-Channel MOSFET General Description Product Summary The AO4492 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=10V) 30V 14A RDS(ON) (at VGS=10V) < 9.5mΩ RDS(ON) (at VGS = 4.5V) < 14mΩ 100% UIS Tested 100% Rg Tested SOIC-8 D Top View D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Units V ±20 V 14 ID TA=70°C C Maximum 30 11.4 A IDM 100 Avalanche Current C IAS, IAR 20 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 20 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 4: Nov 2011 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4492 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 100 ±100 nA 1.7 2.2 V 7.6 9.5 11 13 VGS=4.5V, ID=11A 11 14 mΩ 43 1 V 3 A VGS=10V, ID=14A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=14A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance A 0.74 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance µA 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz mΩ S 770 pF 240 pF 77 pF 0.8 1.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14.8 18 nC Qg(4.5V) Total Gate Charge 7.1 9 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=14A VGS=10V, VDS=15V, RL=1.05Ω, RGEN=3Ω 0.4 2.2 nC 3.1 nC 5 ns 3 ns 18 ns tf Turn-Off Fall Time 3 ns trr Body Diode Reverse Recovery Time IF=14A, dI/dt=500A/µs 11 Qrr Body Diode Reverse Recovery Charge IF=14A, dI/dt=500A/µs 23 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using