AO4494

AO4494 30V N-Channel MOSFET General Description Product Summary The AO4494 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is for PWM applications. VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 6.5mΩ RDS(ON) < 9.5mΩ (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current TC=25°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. ±20 V A 14 IDM 130 IAR 32 A 51 mJ EAR 3.1 PD Junction and Storage Temperature Range Units V 18 ID TC=70°C Maximum 30 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL Typ 28 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4494 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ 30 1 TJ=125°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V VDS=VGS ID=250µA 1.5 VGS=10V, VDS=5V 130 VGS=10V, ID=18A ±100 nA 2.5 V 5.4 6.5 8.4 10.1 9.5 A Static Drain-Source On-Resistance VGS=4.5V, ID=16A 7.5 gFS Forward Transconductance VDS=5V, ID=18A 70 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 0.75 1270 VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=18A 1590 mΩ mΩ S 1 V 3 A 1900 pF 170 240 310 pF 87 145 200 pF 0.8 1.5 2.3 Ω 24 30 36 nC 12 15 18 nC 4.2 5.2 6.2 nC 4.7 7.8 11 nC Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=18A, dI/dt=500A/µs 22 28 34 Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 19 24 30 Body Diode Reverse Recovery Time µA 2 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V Gate Threshold Voltage On state drain current Crss Max VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω 6.7 ns 3.5 ns 22.5 ns 4 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using