AO4498

AO4498 30V N-Channel MOSFET General Description Product Summary The AO4498 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 5.5mΩ RDS(ON) < 7.5mΩ (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. ±20 V A 14 IDM 140 IAR 42 A 88 mJ EAR 3.1 PD Junction and Storage Temperature Range Units V 18 ID TC=70°C Maximum 30 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4498 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ 30 36.5 VDS=30V, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.3 VGS=10V, VDS=5V 140 TJ=55°C 5 VGS=10V, ID=18A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=16A 100 nA 2.5 V 4.6 5.5 6.6 8 6 7.5 mΩ 1 V 4 A A Forward Transconductance VDS=5V, ID=18A 53 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1910 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 2300 pF 227 pF SWITCHING PARAMETERS Qg(10V) Total Gate Charge 37 44.5 Qg(4.5V) Total Gate Charge 18 Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, ID=18A pF 316 2.1 Gate Source Charge mΩ S 1.4 Qgs 0.7 µA 1.8 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 IDSS ID(ON) Max Ω nC nC 4.8 nC 11 nC 8.1 ns VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω 8.6 ns 29 ns 8 ns IF=18A, dI/dt=500A/µs 14 Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 40 17 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using