AO4498E

AO4498E 30V N-Channel MOSFET General Description Product Summary The AO4498E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) VDS 30V 18A RDS(ON) (at VGS=10V) < 5.8mΩ RDS(ON) (at VGS = 4.5V) < 8.5mΩ ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 1: November 2009 Steady-State Steady-State A 3.1 W 2 TJ, TSTG Symbol t ≤ 10s V 120 PD TA=70°C ±20 14 IDM TA=25°C Power Dissipation B Units V 18 ID TA=70°C Maximum 30 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4498E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions ID=250µA, VGS=0V Min Typ 30 36 VDS=30V, VGS=0V TJ=55°C Units V 1 µA 5 ±10 µA 1.8 2.3 V 4.8 5.8 7.4 8.9 VGS=4.5V, ID=16A 6.8 8.5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 120 VGS=10V, ID=18A RDS(ON) Max Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=18A 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss mΩ mΩ S 1 V 4 A 1840 2300 2760 pF 230 330 430 pF 145 240 340 pF 0.6 1.25 1.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 34 42 50 nC Qg(4.5V) Total Gate Charge 16 20 24 nC 5.6 7 8.4 nC 6 10 14 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=18A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=18A, dI/dt=500A/µs 10 12.5 15 Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 22 27 32 VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω 8 ns 10 ns 33 ns 8 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using