AO4498EL

AO4498EL 30V N-Channel MOSFET General Description Product Summary The AO4498EL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS 30V 18A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 5.8mΩ RDS(ON) (at VGS = 4.5V) < 8.5mΩ ESD Protected 100% Rg Tested D SOIC-8 D G G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current C B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Rev 0: March 2009 Steady-State Steady-State A 3.1 W 2 TJ, TSTG Symbol t ≤ 10s V 120 PD TA=70°C ±20 14 IDM TA=25°C Power Dissipation Units V 18 ID TA=70°C Maximum 30 RθJA RθJL www.aosmd.com °C -55 to 150 Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4498EL Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V Min Typ 30 36 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.3 VGS=10V, VDS=5V 120 VGS=10V, ID=18A TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, ID=16A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS VDS=5V, ID=18A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=18A Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs µA ±10 µA 1.8 2.3 V 4.8 5.8 7.4 8.9 6.8 8.5 mΩ 1 V 4 A A 50 0.7 mΩ S 1840 2300 2760 pF 230 330 430 pF 145 240 340 pF 0.6 1.25 1.9 Ω 34 42 50 nC nC 16 20 24 5.6 7 8.4 nC 6 10 14 nC VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω IF=18A, dI/dt=500A/µs Units V 1 VGS(th) ID(ON) RDS(ON) Max 8 ns 10 ns 33 ns 8 ns 10 12.5 15 22 27 32 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using