AO4498L

AO4498L N-Channel Enhancement Mode Field Effect Transistor General Description The AO4498L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Features VDS (V) = 30V ID = 18A RDS(ON) < 5.5mΩ RDS(ON) < 7.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! SOIC-8 D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH Power Dissipation B C C G S Maximum 30 ±20 18 14 140 42 88 3.1 2 -55 to 150 Units V V A A mJ W °C TC=25°C TC=70°C ID IDM IAR EAR PD TJ, TSTG TC=25°C TC=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4498L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=18A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=16A Forward Transconductance VDS=5V, ID=18A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 1.3 140 4.6 6.6 6 53 0.7 1 4 1910 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.7 316 227 1.4 37 VGS=10V, VDS=15V, ID=18A 18 4.8 11 8.1 VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω IF=18A, dI/dt=500A/µs 2 Min 30 Typ 36.5 Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 100 1.8 2.5 5.5 8 7.5 µA nA V A mΩ mΩ S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 2300 2.1 44.5 Ω nC nC nC nC ns ns ns ns SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 8.6 29 8 14 40 17 Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs ns nC A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The value A in any given application depends on the user's specific board design. B. The power dissipation P is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. D C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using