AO4566

AO4566 30V N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application VDS 30V 12A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 11mΩ RDS(ON) (at VGS=4.5V) < 17mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG VGS TA=25°C Units V ±20 V 12 ID TA=70°C Maximum 30 9.4 A Pulsed Drain Current C IDM 48 Avalanche Current C IAS 15 A Avalanche energy L=0.1mH C EAS 11 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TA=25°C PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: Aug 2012 2.5 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.6 RθJA RθJL www.aosmd.com -55 to 150 Typ 42 70 20 °C Max 50 85 30 Units °C/W °C/W °C/W Page 1 of 5 AO4566 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=12A TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V, ID=12A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=12A ±100 nA 2.3 V 9 11 12.5 15 13.5 17 mΩ 1 V 3.5 A 45 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge 1.8 0.72 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance µA 5 1.3 1 Units V 1 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ mΩ S 542 pF 233 pF 31 pF 2 3 Ω 9 12.2 nC 4.3 5.8 nC 2.2 nC Gate Drain Charge 1.7 nC Turn-On DelayTime 4 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 3.5 ns 18 ns tf Turn-Off Fall Time 3 ns trr Body Diode Reverse Recovery Time Qrr IF=12A, dI/dt=500A/µs 9.7 Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs 11.5 ns nC VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using minimum VGS at which RDS(ON) is specified Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=85°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Aug 2012 www.aosmd.com Page 4 of 5 AO4566 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 0: Aug 2012 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5