AO4576

AO4576 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial VDS ID (at VGS=10V) 30V 20A RDS(ON) (at VGS=10V) < 5.8mΩ RDS(ON) (at VGS = 4.5V) < 9.8mΩ 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±20 V 20 ID TA=100°C Maximum 30 12 A Pulsed Drain Current C IDM 144 Avalanche Current C IAS 25 A Avalanche energy L=0.1mH C EAS 31 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TA=25°C PD TA=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev1: Nov. 2012 3.1 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.2 RθJA RθJL -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4576 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=20A µA 5 1.4 0.7 Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ 1.8 100 nA 2.2 V 4.7 5.8 6.2 7.6 7.7 9.8 91 0.7 mΩ mΩ S 1 V 4 A 1037 pF 441 pF 61 pF 1.5 2.3 Ω 15.5 22.5 nC 6.8 10.5 nC 3.0 nC Gate Drain Charge 3.6 nC Turn-On DelayTime 5.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 3.3 ns 18 ns tf Turn-Off Fall Time 4.3 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 12.7 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 17.2 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using