AO4588

AO4588 30V N-Channel MOSFET General Description Product Summary The AO4588 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) VDS 30V 20A RDS(ON) (at VGS=10V) < 4.8mΩ RDS(ON) (at VGS =4.5V) < 6.2mΩ ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±20 V 20 ID TA=70°C Maximum 30 A 15.5 Pulsed Drain Current C IDM Avalanche Current C IAS, IAR 45 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 101 mJ Power Dissipation B Junction and Storage Temperature Range Rev 0: June 2011 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 140 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4588 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ 30 36 VDS=30V, VGS=0V Max V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 140 TJ=55°C µA 5 VDS=0V, VGS= ±16V 10 VGS=10V, ID=20A 1.85 2.4 3.95 4.8 6 7.3 VGS=4.5V, ID=16A 4.9 6.2 VDS=5V, ID=20A 85 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance µA V A RDS(ON) TJ=125°C Units mΩ mΩ S 1 V 4.5 A 1950 2445 2940 pF 270 390 510 pF 130 220 310 pF 1.2 2.4 3.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 32 41 50 nC Qg(4.5V) Total Gate Charge 15 19 24 Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A nC 7.2 nC Qgd Gate Drain Charge 6.6 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time 5 ns tD(off) Turn-Off DelayTime 41.5 ns tf Turn-Off Fall Time 10.5 ns trr Qrr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 17.5 22 31 40 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using