AO4606

AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-Channel VDS= 30V P-Channel -30V ID= 6A (VGS=10V) -6.5A (VGS=-10V) RDS(ON) RDS(ON) < 30mΩ (VGS=10V) < 28mΩ (VGS=-10V) < 42mΩ (VGS=4.5V) < 44mΩ (VGS=-4.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 D2 Top View D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 n-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel VDS Drain-Source Voltage 30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current ID TA=70°C S1 p-channel Max p-channel -30 Units V ±20 ±20 V 6 -6.5 A 5 -5.3 IDM 30 -30 Avalanche Current C IAS, IAR 10 23 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 5 26 mJ Pulsed Drain Current Power Dissipation B C PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 10: April 2012 Steady-State Steady-State 2 1.3 TJ, TSTG Symbol t ≤ 10s 2 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 W °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 9 AO4606 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=6A TJ=125°C VGS=4.5V, ID=5A ±100 nA 1.8 2.4 V 25 30 40 48 33.5 42 mΩ 1 V 2.5 A A gFS Forward Transconductance VDS=5V, ID=6A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 IGSS Coss Units 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ mΩ S 200 255 310 pF VGS=0V, VDS=15V, f=1MHz 30 45 60 pF 20 35 50 pF VGS=0V, VDS=0V, f=1MHz 1.6 3.25 4.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4 5.2 6 nC Qg(4.5V) Total Gate Charge 2 2.55 3 nC VGS=10V, VDS=15V, ID=6A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=6A, dI/dt=100A/µs 8.5 12 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 2.2 3 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 0.85 nC 1.3 nC 4.5 ns 2.5 ns 14.5 ns 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using