AO4611

AO4611 60V Dual P + N-Channel MOSFET General Description Product Summary The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-Channel VDS (V) = 60V ID = 6.3A (VGS=10V) RDS(ON) < 25mΩ (VGS=10V) < 30mΩ (VGS=4.5V) P-Channel -60V -4.9A 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested < 42mΩ (VGS = -10V) < 52mΩ (VGS = -4.5V) SOIC-8 Top View D2 Bottom View D1 Top View S2 G2 S1 G1 D2 D2 D1 D1 G2 G1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 60 Gate-Source Voltage Continuous Drain Current A VGS TA=25°C TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation S1 n-channel TA=70°C Junction and Storage Temperature Range Max p-channel -60 ±20 ±20 6.3 -4.9 ID 5 -3.9 IDM 40 -30 TJ, TSTG A 2 2 1.28 -55 to 150 -55 to 150 Symbol RθJA RθJL RθJA RθJL Units V V 1.28 PD Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. p-channel W °C Device n-ch n-ch n-ch Typ 48 74 35 Max 62.5 110 60 Units °C/W °C/W °C/W p-ch p-ch p-ch 48 74 35 62.5 110 40 °C/W °C/W °C/W AO4611 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 40 VGS=10V, ID=6.3A TJ=125°C VGS=4.5V, ID=5.7A gFS Forward Transconductance VDS=5V, ID=6.3A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 60 VDS=48V, VGS=0V IGSS RDS(ON) Typ 100 nA 2.1 3 V 20 25 34 42 22 30 mΩ 1 V 3 A A mΩ 27 0.74 1920 VGS=0V, VDS=30V, f=1MHz µA S 2300 pF 155 pF 116 pF 0.65 0.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 47.6 58 nC Qg(4.5V) Total Gate Charge 24.2 30 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=6.3A 6 nC 14.4 nC 7.6 ns VGS=10V, VDS=30V, RL=4.7Ω, RGEN=3Ω 5 ns 28.9 ns IF=6.3A, dI/dt=100A/µs 33.2 5.5 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6.3A, dI/dt=100A/µs ns 40 43 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using