AO4612

AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 56mW (VGS=10V) < 77mW (VGS=4.5V) RDS(ON) < 105mW (VGS = -10V) < 135mW (VGS = -4.5V) 100% Rg tested SOIC-8 Top View D1 D2 Bottom View S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G2 G1 S2 SOIC-8 n-channel S1 p-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation ±20 4.5 -3.2 ID 3.6 -2.6 IDM 20 -20 Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Steady-State Maximum Junction-to-Lead C Rev 4.0: August. 2019 Units V V A 2 2 1.28 1.28 TJ, TSTG -55 to 150 -55 to 150 °C Symbol Typ 48 74 35 Max 62.5 90 40 Units °C/W °C/W °C/W PD TA=70°C Max p-channel -60 ±20 TA=25°C Continuous Drain Current A Max n-channel 60 RqJA RqJL www.aosmd.com W Page 1 of 9 AO4612 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V Typ Max 60 V VDS=48V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 TJ=55°C VGS=10V, ID=4.5A 5 100 nA 3 V 46 56 A Static Drain-Source On-Resistance VGS=4.5V, ID=3A 64 gFS Forward Transconductance VDS=5V, ID=4.5A 11 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance mA 2.1 RDS(ON) TJ=125°C Units 79 77 mW mW S 0.74 1 V 3 A 450 pF VGS=0V, VDS=30V, f=1MHz 60 pF VGS=0V, VDS=0V, f=1MHz 1.65 2 W SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8.5 12 nC Qg(4.5V) Total Gate Charge 4.3 7 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 25 VGS=10V, VDS=30V, ID=4.5A Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/ms pF 1.6 nC Gate Drain Charge 2.2 nC Turn-On DelayTime 4.7 ns Body Diode Reverse Recovery Time VGS=10V, VDS=30V, RL=6.7W, RGEN=3W 2.3 ns 15.7 ns 1.9 ns IF=4.5A, dI/dt=100A/ms 27.5 ns nC 32 A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R qJA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 ms pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev 4.0: August. 2019 www.aosmd.com Page 2 of 9 AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 20 15 VDS=5V 10V 5.0V 15 125°C ID(A) ID (A) 10 4.5V 10 4.0V 5 5 25°C VGS=3.5V 0 0 0 1 2 3 4 2 5 2.5 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 100 2 80 Normalized On-Resistance 90 RDS(ON) (mW) 3 VGS=4.5V 70 60 50 VGS=10V 40 30 20 0 5 10 15 VGS=10V ID=4.5A 1.8 1.6 1.4 VGS=4.5V ID=3.0A 1.2 1 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 140 1.0E+01 ID=4.5A 1.0E+00 120 100 IS (A) RDS(ON) (mW) 125°C 1.0E-01 125°C 1.0E-02 80 25°C 1.0E-03 25°C 60 1.0E-04 40 2 4 6 8 10 1.0E-05 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev 4.0: August. 2019 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 9 AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 800 VDS=30V ID= 4.5A Capacitance (pF) VGS (Volts) 8 6 4 2 600 Ciss 400 Coss 200 0 0 2 4 6 8 Crss 0 10 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 30 40 50 60 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 RDS(ON) limited 10ms 1.0 1ms 0.1 TJ(Max)=150°C TA=25°C 10ms 0.1s 1s 10s DC 1 10 20 10 0.0 0.1 TJ(Max)=150°C TA=25°C 30 Power (W) 10.0 ID (Amps) 20 0 0.001 100 VDS (Volts) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZqJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=62.5°C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev 4.0: August. 2019 www.aosmd.com Page 4 of 9 AO4612 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 4.0: August. 2019 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 9 AO4612 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250mA, VGS=0V -60 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -20 RDS(ON) Static Drain-Source On-Resistance TJ=55°C VGS=-10V, ID=-3.2A VGS=-4.5V, ID=-2.8A gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Units -2.1 mA ±100 nA -3 V A 105 145 106 135 9 -0.73 mW mW S -1 V -3 A 930 pF VGS=0V, VDS=-30V, f=1MHz 85 pF VGS=0V, VDS=0V, f=1MHz 9.5 15 W 16 22 nC 8 12 nC 35 SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) -5 84 TJ=125°C VDS=-5V, ID=-3.2A Max V VDS=-48V, VGS=0V IDSS Coss Typ VGS=-10V, VDS=-30V, ID=-3.2A pF 2.5 nC 3.2 nC 8 ns 3.8 ns 31.5 ns 7.5 ns IF=-3.2A, dI/dt=100A/ms 27 Body Diode Reverse Recovery Charge IF=-3.2A, dI/dt=100A/ms 32 ns nC Body Diode Reverse Recovery Time VGS=-10V, VDS=-30V, RL=9.4W, RGEN=3W A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The The value value in any in aany given a given application application depends depends on the onuser's the user's specific specific board board design. design. The current The current rating rating is based is based on the ont the ≤ 10s t ≤ thermal 10s thermal resistance rating. resistance B: Repetitive rating. rating, pulse width limited by junction temperature. B: Repetitive pulse width limitedimpedence by junctionfrom temperature. C. The R qJA israting, the sum of the thermal junction to lead R qJL and lead to ambient. C. The static R qJA ischaracteristics the sum of theinthermal from lead R lead duty to ambient. D. Figuresimpedence 1 to 6,12,14 arejunction obtainedtousing 80qJL msand pulses, cycle 0.5% max. D. The static characteristics Figures 1 to 6,12,14 are on obtained usingboard 80 mswith pulses, cyclein0.5% E. These tests are performedinwith the device mounted 1 in 2 FR-4 2oz.duty Copper, a stillmax. air environment with T A=25°C. The SOA E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The curve provides a single pulse rating. SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev 4.0: August. 2019 www.aosmd.com Page 6 of 9 AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 20 -10V VDS=-5V -4.5V 25 -4.0V 10 20 -ID(A) -ID (A) 15 -3.5V 15 10 5 125°C VGS=-3.0V 5 0 25°C 0 0 1 2 3 4 5 1 1.5 -VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 Normalized On-Resistance 2 120 RDS(ON) (mW) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics 130 VGS=-4.5V 110 100 90 VGS=-10V 80 70 0 2 4 6 8 ID=-3.2A 1.8 VGS=-10V 1.6 VGS=-4.5V 1.4 ID=-2.8A 1.2 1 0.8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 250 1.0E+01 ID=-3.2A 1.0E+00 125°C 200 1.0E-01 125°C -IS (A) RDS(ON) (mW) 2 150 100 1.0E-02 1.0E-03 1.0E-04 25°C 25°C 1.0E-05 50 2 3 4 5 6 7 8 9 10 1.0E-06 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev 4.0: August. 2019 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics Page 7 of 9 AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 1400 10 VDS=-30V ID=-3.2A 1200 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 1000 800 600 400 Coss 2 Crss 200 0 0 4 8 12 16 0 20 0 10 -Qg (nC) Figure 7: Gate-Charge Characteristics 30 40 50 60 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 TJ(Max)=150°C TA=25°C 10ms RDS(ON) limited 100ms 1.0 1ms 0.1 10ms 0.1s 1s 10s TJ(Max)=150°C TA=25°C 30 Power (W) 10.0 -ID (Amps) 20 10 DC 0 0.001 0.0 0.1 1 10 20 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZqJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=62.5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev 4.0: August. 2019 www.aosmd.com Page 8 of 9 AO4612 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs td(off) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 4.0: August. 2019 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 9 of 9