AO4613

AO4613 30V Dual P + N-Channel MOSFET General Description Product Summary The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-Channel P-Channel VDS (V) = 30V -30V ID = 7.2A (VGS=10V) -6.1A (VGS=10V) RDS(ON) RDS(ON) < 24mΩ (VGS=10V) < 37mΩ (VGS = -10V) < 40mΩ (VGS=4.5V) < 60mΩ (VGS = -4.5V) ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D2 D1 Bottom View Top View S2 G2 S1 G1 D2 D2 D1 D1 G2 G1 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current A VGS TA=70°C TA=25°C ±20 7.2 -6.1 ID 6.1 -5.1 IDM 30 -30 Avalanche Current B Repetitive avalanche energy 0.1mH B Junction and Storage Temperature Range V A 2 2 1.44 IAR 15 20 A EAR 11 20 -55 to 150 -55 to 150 mJ °C TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Units V 1.44 PD TA=70°C Max p-channel -30 ±20 TA=25°C Pulsed Drain Current B Power Dissipation n-channel p-channel Pin1 Symbol RθJA RθJL RθJA RθJL W Max Typ n-ch n-ch n-ch 55 92 37 62.5 110 50 Units °C/W °C/W °C/W p-ch p-ch p-ch 48 84 37 62.5 110 50 °C/W °C/W °C/W AO4613 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 5 IGSS Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 VGS=10V, ID=7.2A TJ=125°C VGS=4.5V, ID=4A gFS Forward Transconductance VDS=5V, ID=7.2A VSD Diode Forward Voltage IS=1A IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 10 µA 3 V 20 24 29 35 30 40 A 18 0.77 mΩ mΩ S 1 V 3 A 630 pF VGS=0V, VDS=15V, f=1MHz 110 VGS=0V, VDS=0V, f=1MHz 2.1 3 Ω 11 15 nC 5.3 7 nC pF 75 VGS=10V, VDS=15V, ID=7.2A VGS=10V, VDS=15V, RL=2.1Ω, RGEN=3Ω pF 1.9 nC 4 nC 4.7 7 ns 4.9 10 ns 16.2 22 ns 3.5 7 ns ns nC tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=7.2A, dI/dt=100A/µs 15.7 20 Qrr Body Diode Reverse Recovery Charge IF=7.2A, dI/dt=100A/µs 7.9 10 Body Diode Reverse Recovery Time µA 2 522 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 10 Units V TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V VGS(th) RDS(ON) Typ A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4613 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Typ VDS=-24V, VGS=0V -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V 30 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V -0.77 IS Maximum Body-Diode Continuous Current TJ=55°C Output Capacitance Reverse Transfer Capacitance Rg Gate resistance -1.7 -3 28 37 48 VGS=-4.5V, ID=-4A 45 60 VDS=-5V, ID=-6.1A 12.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) VGS=-10V, VDS=-15V, ID=-6.1A V mΩ mΩ -1 V 3 A 1250 pF 179 pF 134 VGS=0V, VDS=0V, f=1MHz µA S 1040 VGS=0V, VDS=-15V, f=1MHz µA A 39 TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Crss -5 10 VGS=-10V, ID=-6.1A Units V IDSS Coss Max pF 5 10 Ω 16.8 22 nC 8.7 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge 5 tD(on) Turn-On DelayTime 9 12 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=3Ω 3.4 nC nC 5.7 11 ns 22.7 30 ns 10.2 20 ns IF=-6.1A, dI/dt=100A/µs 21.7 27 Body Diode Reverse Recovery Charge IF=-6.1A, dI/dt=100A/µs 13.6 18 ns nC A: The value of R θJA is measured with the device mounted on 1in 22 FR-4 board with 2oz. Copper, in a still air environment with T AA =25°C. The θJA value in any given application depends on theon user's specific boardboard design. The current rating rating is based on theon t the ≤ 10s resistance The value in any a given application depends the user's specific design. The current is based t ≤ thermal 10s thermal rating. resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to thermal resistance from junction to drain D. The static characteristics in Figures 1 lead. to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. D. The static Figures 1 to 6,12,14 areon obtained usingboard 80 µswith pulses, cyclein0.5% E. These testscharacteristics are performedinwith the device mounted 1 in 2 FR-4 2oz.duty Copper, a stillmax. air environment with T =25°C. The E. These tests are performed with the device mounted on 1 in SOA curve provides a single pulse rating. curve provides a single pulse rating. 2 A FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4613 N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 5V 10V 4.5V 25 VDS=5V 16 4V 12 ID(A) ID (A) 20 15 3.5V 8 125°C 10 4 5 VGS=3V 25°C 0 0 0 1 2 3 4 0 5 0.5 1.5 2 2.5 3 3.5 4 4.5 150 175 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 1.6 35 Normalized On-Resistance 40 RDS(ON) (mΩ ) 1 VGS=4.5V 30 25 20 15 VGS=10V 1.5 VGS=10V ID=7.2A 1.4 1.3 VGS=4.5V ID=4A 1.2 1.1 1 0.9 0.8 10 0 5 10 15 0 20 25 50 75 100 125 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 1.0E+01 ID=7.2A 1.0E+00 60 1.0E-01 IS Amps RDS(ON) (mΩ ) 50 125°C 40 125°C 1.0E-02 25°C 1.0E-03 30 1.0E-04 20 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics 1.0 AO4613 N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 VDS=15V ID=7.2A 6 4 Ciss 700 600 500 400 300 200 2 Coss 100 Crss 0 0 0 2 4 6 8 10 0 12 100 25 30 10µs Power W ID (Amps) 20 TJ(Max)=150°C TA=25°C 10ms 0.1s 1 15 30 100µs 1ms 10 10 40 TJ(Max)=150°C TA=25°C RDS(ON) limited 5 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge characteristics 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4613 P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 30 -10V -6V 20 -4V -5V 20 15 15 -ID(A) -ID (A) VDS=-5V -4.5V 25 -3.5V 10 10 VGS=-3V 125°C 5 5 25°C -2.5V 0 0 0 1 2 3 4 5 0 1 90 3 4 5 6 1.6 Normalized On-Resistance 80 70 RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 60 VGS=-4.5V 50 40 VGS=-10V 30 VGS=-10V ID=-6.1A 1.4 VGS=-4.5V ID=-4 1.2 1 0.8 20 0 5 10 15 20 0 25 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 1.0E+01 ID=-6.1A 90 1.0E+00 80 1.0E-01 125°C -IS (A) RDS(ON) (mΩ ) 70 60 125°C 50 40 1.0E-03 1.0E-04 25°C 30 1.0E-02 25°C 1.0E-05 20 1.0E-06 10 3 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4613 P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=-15V ID=-6.1A 1250 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2 1000 750 500 Coss Crss 250 0 0 0 4 8 12 16 20 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 100µs 30 0.1s 30 Power (W) -ID (Amps) 25 TJ(Max)=150°C TA=25°C RDS(ON) limited 1ms 10ms 1s 20 10 10s DC 0 0.001 0.1 0.1 20 40 TJ(Max)=150°C, T A=25°C 1.0 15 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 10 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000