AO4618

AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. N-Channel VDS= 40V P-Channel -40V ID= 8A (VGS=10V) -7A (VGS=-10V) RDS(ON) RDS(ON) < 19mΩ (VGS=10V) < 23mΩ (VGS=-10V) < 27mΩ (VGS=4.5V) < 30mΩ (VGS=-4.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 Top View D2 D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S1 S2 n-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel VDS Drain-Source Voltage 40 Gate-Source Voltage VGS TA=25°C Continuous Drain Current ID TA=70°C p-channel Max p-channel -40 Units V ±20 ±20 V 8 -7 A 6 -5.5 IDM 40 -35 Avalanche Current C IAS 15 -35 A Avalanche energy L=0.1mH C TA=25°C EAS 11 61 mJ Pulsed Drain Current Power Dissipation B C PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1. 0: August 2013 Steady-State Steady-State 2 1.3 TJ, TSTG Symbol t ≤ 10s 2 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 W °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 9 AO4618 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A TJ=125°C VGS=4.5V, ID=4A gFS Forward Transconductance VDS=5V, ID=8A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=10V, VDS=20V, ID=8A µA 5 1.4 1 Units V 1 TJ=55°C VGS(th) Max 40 VDS=40V, VGS=0V IGSS Coss Typ 1.9 ±100 nA 2.4 V 15.4 19 22.5 29 21 27 mΩ 1 V 2.5 A 33 0.75 mΩ S 415 pF 112 pF 11 pF 2.2 3.5 Ω 6.5 12 nC 3 6 nC 1.2 nC Gate Drain Charge 1.1 nC tD(on) Turn-On DelayTime 4 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr IF=8A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs Qrr VGS=10V, VDS=20V, RL=2.5Ω, RGEN=3Ω 3 ns 15 ns 2 ns 12.5 ns nC 3.5 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using