AO4619

AO4619 Complementary Enhancement Mode Field Effect Transistor General Description Product Summary The AO4619 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. N-Channel VDS (V) = 30V ID = 7.4A (VGS=10V) RDS(ON) < 24mΩ (VGS=10V) < 36mΩ (VGS=4.5V) 100% UIS Tested 100% Rg Tested P-Channel -30V -5.2A (VGS = -10V) RDS(ON) < 46mΩ (VGS = -10V) < 72mΩ (VGS = -4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D2 D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol Drain-Source Voltage VDS 30 VGS TA=70°C Pulsed Drain Current B TA=25°C A TA=70°C Power Dissipation Avalanche Current B p-channel Max p-channel -30 ±20 ±20 7.4 -5.2 ID 6 -4.2 IDM 64 -25 TA=25°C Continuous Drain Current F S1 n-channel Pin1 Gate-Source Voltage G1 PD 2 2 1.3 1.3 Units V V A W IAR 9 11 A Repetitive avalanche energy 0.3mH B EAR 12 18 Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 mJ °C Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 50 82 41 Max 62.5 110 50 Units °C/W °C/W °C/W p-ch p-ch p-ch 50 82 41 62.5 110 50 °C/W °C/W °C/W www.aosmd.com AO4619 N-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ 30 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 64 VGS=10V, ID=7.4A 100 nA 2.6 V 17.7 24 25 34 36 A Static Drain-Source On-Resistance VGS=4.5V, ID=6A 25.3 gFS Forward Transconductance VDS=5V, ID=7.4A 20 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 0.74 373 VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=7.4A µA 2.1 RDS(ON) TJ=125°C Units V VDS=24V, VGS=0V IGSS Crss Max mΩ mΩ S 1 V 2.5 A 448 pF 67 pF 41 pF 1.2 1.8 Ω 7.2 nC 3.5 nC 1.3 nC Qgd Gate Drain Charge 1.7 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω 2.7 ns 14.9 ns 2.9 ns IF=7.4A, dI/dt=100A/µs 10.5 Body Diode Reverse Recovery Charge IF=7.4A, dI/dt=100A/µs 4.5 ns nC Body Diode Reverse Recovery Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using