AO4622

AO4622 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4622 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4622 is Pb-free (meets ROHS & Sony 259 specifications). n-channel VDS (V) = 20V ID = 7.3A (VGS=4.5V) RDS(ON) < 23mΩ (VGS=10V) < 30mΩ (VGS=4.5V) < 84mΩ (VGS=2.5V) p-channel -20V -5A (VGS=-4.5V) RDS(ON) < 53mΩ (VGS = -4.5V) < 87mΩ (VGS = -2.5V) D2 D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 G2 G1 S2 S1 SOIC-8 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 V Gate-Source Voltage ±16 GS Continuous Drain AF Current Pulsed Drain Current TA=70°C Power Dissipation B Avalanche Current 6.2 -4.2 35 -25 2 2 1.44 1.44 13 13 A 25 25 -55 to 150 -55 to 150 mJ °C PD TA=70°C Repetitive avalanche energy 0.3mH IAR B Junction and Storage Temperature Range EAR TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. V ±12 -5 ID IDM TA=25°C Units V 7.3 TA=25°C B Max p-channel -20 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 48 74 35 p-ch p-ch p-ch 48 74 35 A W Max 62.5 110 40 Units °C/W °C/W °C/W 62.5 °C/W 110 °C/W 40 °C/W www.aosmd.com AO4622 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C Gate-Body leakage current VDS=0V, VGS=±16V VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 35 VGS=10V, ID=7.3A TJ=125°C Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr 23 28 33.6 A mΩ 30 mΩ 84 mΩ VDS=5V, ID=7.3A DYNAMIC PARAMETERS Ciss Input Capacitance Rg 19 24 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Crss V 67 Forward Transconductance Output Capacitance nA 2 VGS=4.5V, ID=6.4A VSD Coss 100 1.25 VGS=2.5V, ID=4.5A gFS IS uA 5 Gate Threshold Voltage Units V VDS=16V, VGS=0V VGS(th) Static Drain-Source On-Resistance Max 20 IGSS RDS(ON) Typ 17 0.7 900 VGS=0V, VDS=10V, f=1MHz S 1 V 3 A 1100 pF 162 pF 105 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=10V, ID=6.5A VGS=10V, VDS=10V, RL=1.4Ω, RGEN=3Ω IF=7.3A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/µs pF 1.8 2.7 Ω 15 18 nC 7.2 9 nC 1.8 nC 2.8 nC 4.5 ns 9.2 ns 18.7 ns 3.3 ns 18 ns nC 9.5 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. R θJL and RθJC are equivalent terms referring to thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using