AO4629

AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. N-Channel VDS= 30V P-Channel -30V ID= 6A (VGS=10V) -5.5A (VGS=-10V) RDS(ON) RDS(ON) < 30mΩ (VGS=10V) < 41mΩ (VGS=-10V) < 42mΩ (VGS=4.5V) < 74mΩ (VGS=-4.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 D2 Top View D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 n-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current ID TA=70°C C S1 p-channel Max p-channel -30 Units V ±20 ±20 V 6 -5.5 5 -4.5 A IDM 30 -25 Avalanche Current C IAS, IAR 10 17 A Avalanche energy L=0.1mH C EAS, EAR 5 14 mJ TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Rev 2: Nov 2011 Steady-State Steady-State 2 1.3 TJ, TSTG Symbol t ≤ 10s 2 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 W °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 9 AO4629 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min Conditions ID=250µA, VGS=0V V TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.2 VGS=10V, VDS=5V 30 VGS=10V, ID=6A 100 nA 2.4 V 25 30 40 48 42 A Static Drain-Source On-Resistance VGS=4.5V, ID=5A 33 gFS Forward Transconductance VDS=5V, ID=6A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 255 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz mΩ mΩ S 1 V 2.5 A 310 45 1.6 µA 1.8 RDS(ON) Output Capacitance Units 1 VGS(th) Coss Max 30 VDS=30V, VGS=0V uses ID(ON) Typ pF pF 35 50 pF 3.25 4.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4 5.2 6.3 nC Qg(4.5V) Total Gate Charge 2 2.55 3.2 nC VGS=10V, VDS=15V, ID=6A Qgs Gate Source Charge 0.85 nC Qgd Gate Drain Charge 1.3 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time 2.5 ns tD(off) Turn-Off DelayTime 14.5 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 8.5 12 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 2.2 3 VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using