AO4630

AO4630 30V Complementary MOSFET General Description Product Summary AO4630 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. N-Channel VDS= 30V P-Channel -30V ID= 7A (VGS=10V) -5A (VGS=-10V) RDS(ON) RDS(ON) < 23mΩ (VGS=10V) < 48mΩ (VGS=-10V) < 28mΩ (VGS=4.5V) < 57mΩ (VGS=-4.5V) < 36mΩ (VGS=2.5V) < 78mΩ (VGS=-2.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 D2 Bottom View Top View S1 G1 S2 G2 1 2 3 4 D1 D1 D2 D2 8 7 6 5 G1 G2 S1 N-channel Pin1 S2 P-channel Orderable Part Number Package Type Form Minimum Order Quantity AO4630 SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Max N-channel Parameter Drain-Source Voltage VDS 30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current ID TA=70°C C Avalanche Current C Avalanche energy L=0.1mH VDS Spike 10µs TA=25°C Power Dissipation B C Junction and Storage Temperature Range Rev.1.0: Nov 2015 Units V ±12 ±12 V 7 -5 -4 30 -25 IAS 14 18 A EAS 10 16 mJ VSPIKE 36 -36 V 2 Steady-State Steady-State W 1.3 TJ, TSTG Symbol t ≤ 10s A 5.6 IDM PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Max P-channel -30 RθJA RθJL -55 to 150 Typ 48 74 32 www.aosmd.com °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 9 AO4630 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS, ID=250µA V TJ=55°C ±100 nA 1.05 1.45 V 17.8 23 28 40 VGS=4.5V, ID=6A 19 28 mΩ VGS=2.5V, ID=5A 24 36 mΩ 1 V 2.5 A 0.65 TJ=125°C gFS Forward Transconductance VDS=5V, ID=7A 35 Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VSD Coss Units 1 VGS=10V, ID=7A Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz mΩ S 670 pF 75 pF 45 pF 3 4.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13 20 nC Qg(4.5V) Total Gate Charge 6 12 Qgs Gate Source Charge Qgd Gate Drain Charge f=1MHz VGS=10V, VDS=15V, ID=7A 1.5 nC 1.8 nC 3 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=7A, di/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=7A, di/dt=500A/µs 7.5 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω nC 1.3 2.5 ns 25 ns 4 ns 6.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 1E-05 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: Nov 2015 www.aosmd.com Page 4 of 9 AO4630 Figure A: Charge Gate Charge Circuit & Waveforms Gate Test Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: Nov 2015 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 9 AO4630 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS, ID=-250µA TJ=55°C ±100 nA -0.9 -1.3 V 40 48 48 60 VGS=-4.5V, ID=-3.5A 45 57 mΩ VGS=-2.5V, ID=-2.5A 60 78 mΩ -0.5 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-5A 18 Diode Forward Voltage IS=-1A, VGS=0V -0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA -5 VSD Coss Units -1 VGS=-10V, ID=-5A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz mΩ S -1 V -2.5 A 700 pF 80 pF 60 pF 8 12 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14 25 nC Qg(4.5V) Total Gate Charge 7 15 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-5A, di/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=-5A, di/dt=500A/µs 40 Body Diode Reverse Recovery Time f=1MHz VGS=-10V, VDS=-15V, ID=-5A VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω 4 nC 1.5 nC 2.5 nC 6.5 ns 3.5 ns 41 ns 9 ns 15 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using