AO4701

AO4701 30V P-Channel MOSFET with Schottky Diode General Description Product Summary The AO4701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. VDS ID (at VGS=-10V) -30V -5A RDS(ON) (at VGS=-10V) < 48mΩ RDS(ON) (at VGS =-4.5V) < 57mΩ RDS(ON) (at VGS =-2.5V) < 80mΩ 100% UIS Tested 100% Rg Tested Schottky VDS(V)=30V, IF=3A, VF=0.5V@1A SOIC-8 Top View Bottom View Top View A A S G D K K K D D G A S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter MOSFET Symbol Drain-Source Voltage VDS -30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C Schottky reverse voltage Continuous Forward TA=25°C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter: MOSFET Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Parameter: Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 5: May 2011 -25 IAS, IAR 18 EAS, EAR 16 t ≤ 10s Steady-State Steady-State t ≤ 10s Steady-State Steady-State A A mJ 30 4.4 3.2 V A 2 2 1.3 1.3 TJ, TSTG -55 to 150 -55 to 150 °C Symbol Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W 49 72 31 62.5 90 40 °C/W °C/W °C/W PD TA=70°C V -4 IDM IF TA=25°C B Units V -5 VKA TA=70°C Current ±12 ID TA=70°C C Schottky RθJA RθJL RθJA RθJL www.aosmd.com W Page 1 of 6 AO4701 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Typ -1 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -25 TJ=55°C ±100 nA -0.9 -1.3 V 40 48 60 72 VGS=-4.5V, ID=-4A 45 57 mΩ 80 mΩ TJ=125°C A RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-1A 60 gFS Forward Transconductance VDS=-5V, ID=-5A 18 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current -0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 645 VGS=0V, VDS=-15V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr S -1 V -2.5 A 780 pF 80 pF VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-5A 4 7.8 pF Ω 12 7 nC 1.5 nC 2.5 nC 6.5 ns VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω 3.5 ns 41 ns 9 ns IF=-5A, dI/dt=100A/µs 11 Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 3.5 ns nC Body Diode Reverse Recovery Time SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1A 0.45 0.5 0.007 0.05 Irm VR=30V VR=30V, TJ=125°C 3.2 10 VR=30V, TJ=150°C 12 37 20 CT mΩ 55 SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs µA -5 VGS=-10V, ID=-5A Crss Units V VDS=-30V, VGS=0V IDSS Coss Max Maximum reverse leakage current Junction Capacitance VR=15V V mA pF A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using