AO4710

AO4710 N-Channel Enhancement Mode Field Effect Transistor SRFET TM TM General Description SRFET The AO4710 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4710 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID =12.7A (VGS = 10V) RDS(ON) < 11.8mΩ (VGS = 10V) RDS(ON) < 14.2mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G D D D D G S SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain AF Current Pulsed Drain Current Avalanche Current C C B Maximum 30 ±12 12.7 10 60 22 73 3.1 2.0 -55 to 150 Units V V A A A mJ W °C VGS TA=25°C TA=70°C IDSM IDM IAR EAR PDSM TJ, TSTG Repetitive avalanche energy L=0.3mH TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4710 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=11A Forward Transconductance VDS=5V, ID=12.7A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V TJ=125°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=12.7A TJ=125°C 1.5 60 9.8 15.2 11.7 78 0.38 0.5 5 1980 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 317 111 1.3 33 VGS=10V, VDS=15V, ID=12.7A 15.0 5.3 6.0 5.5 VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω IF=12.7A, dI/dt=300A/µs 5.5 27.0 4.3 11.2 7 13 2.0 43 20 2376 11.8 19.0 14.2 1.9 Min 30 0.02 6 0.1 20 0.1 2.3 Typ Max Units V mA µA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12.7A, dI/dt=300A/µs A: The value of R θJA is measured withthe device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using