AO4710L_101

AO4710 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4710/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS(ON), and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.AO4710 and AO4710L are electrically identical. -RoHS Compliant -AO4710L is Halogen Free VDS (V) = 30V ID =12.7A (VGS = 10V) RDS(ON) < 11.8mΩ (VGS = 10V) RDS(ON) < 14.2mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G D D D D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF TA=25°C Maximum 30 Units V ±12 V 12.7 TA=70°C A 10 Pulsed Drain Current B IDSM IDM Avalanche Current C IAR 22 A Repetitive avalanche energy L=0.3mH C EAR 73 mJ TA=25°C Power Dissipation Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. W 2.0 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 3.1 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C 60 RθJA RθJL Typ 32 60 17 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4710 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=1mA, VGS=0V VDS=30V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=10V, VDS=5V 60 ID(ON) TJ=125°C VGS=10V, ID=12.7A RDS(ON) TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, ID=11A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current IS VDS=5V, ID=12.7A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Max Units 0.02 0.1 6 20 0.1 µA 1.9 2.3 V 9.8 11.8 15.2 19.0 11.7 14.2 30 IDSS VGS(th) Typ V A VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=12.7A mΩ mΩ 78 0.38 1980 VGS=0V, VDS=15V, f=1MHz mA S 0.5 V 5 A 2376 pF 317 pF 111 pF 1.3 Ω 2.0 33 43 nC 15.0 20 nC 5.3 nC 6.0 nC 5.5 ns VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω 5.5 ns 27.0 ns 4.3 ns IF=12.7A, dI/dt=300A/µs 11.2 trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=12.7A, dI/dt=300A/µs 13 7 ns nC A: The value of R θJA is measured withthe device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using