AO4722

AO4722 30V N-Channel MOSFET SRFET General Description TM Product Summary TM VDS (V) = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 22mΩ (VGS = 4.5V) SRFET The AO4722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS 30 Gate-Source Voltage ±20 VGS TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C IDSM B Avalanche Current B Repetitive avalanche energy L=0.3mH TA=25°C Power Dissipation B TA=70°C 17 EAR PDSM Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Alpha & Omega Semiconductor, Ltd. 6.8 IAR TJ, TSTG t ≤ 10s 8.5 9.3 100 RθJA RθJL 43 A mJ 3.1 1.7 2.0 1.1 -55 to 150 Typ 32 60 17 Units V 11.6 IDM Junction and Storage Temperature Range Maximum Junction-to-Ambient A Steady State W °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4722 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.3 VGS=10V, VDS=5V 100 TJ=125°C VGS=10V, ID=11.6A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=9.3A gFS Forward Transconductance VDS=5V, ID=11.6A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units V 0.1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ 10 0.1 µA 1.65 2.5 V 11.5 14 17 21 17.5 22 mΩ 0.5 V 4 A A mΩ 28 0.43 903 VGS=0V, VDS=15V, f=1MHz mA S 1100 pF 225 pF 91 pF 1.7 2.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 15.3 20 nC Qg(4.5V) Total Gate Charge 7.8 10 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=11.6A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=11.6A, dI/dt=300A/µs Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=1.3Ω, RGEN=3Ω IF=11.6A, dI/dt=300A/µs 2.0 nC 3.9 nC 5.0 ns 9.2 ns 17.8 ns 4.4 ns 17 20 30.0 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using