AO4726

SRFET TM AO4726 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET The AO4726/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. AO4726 and AO4726L are electrically identical. -RoHS Compliant -AO4726L is Halogen Free D S S S G D D D D Features VDS (V) = 30V ID =18A (VGS = 10V) RDS(ON) < 6m Ω (VGS = 10V) RDS(ON) < 7m Ω (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested G S SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Avalanche Current B B B Maximum Units V 30 ±12 18 14 80 42 265 3.1 2.0 -55 to 150 TA=25°C TA=70°C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25°C A Repetitive avalanche energy L=0.3mH Power Dissipation TA=70°C mJ W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4726 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=17A Forward Transconductance VDS=5V, ID=18A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=250uA, V GS=0V VDS=30V, V GS=0V TJ=125°C VDS=0V, VGS= ±12V VDS=VGS ID=250 µA VGS=10V, V DS=5V VGS=10V, ID=18A TJ=125°C 1.4 80 4.5 7 5.3 90 0.36 0.5 5.5 3940 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 590 255 0.72 72.8 VGS=10V, V DS=15V, ID=18A 35.0 10.4 12.4 9.8 VGS=10V, V DS=15V, R L=0.83 Ω, RGEN=3Ω IF=18A, dI/dt=300A/ µs IF=18A, dI/dt=300A/ µs 8.4 45 10 36 32 43 1.1 95 5120 6 9 7 1.75 Min 30 0.1 10 ±100 2.3 Typ Max Units V mA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. ±12 B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using